Looks interesting. Hopefully this is the first in a long line of flash-killers. Several places seem to confirm, but it will likely be a while until we see products made from it.
For older devices (looks like 90nm process):The VCC is a little high, at ~3V, but the highest current draw I could see is 51mA, not too bad. http://www.micron.com/~/media/Documents ... pcm_ds.pdf
for a parallel, 128Mb chip. To give a 1TB memory module, you would need a square 3 meters on a side with both sides covered with these. Read cycle time is 135ns, or between a factor of 4 and 10 slower than DDR3 RAM (depending on how you define read cycle time). Still pretty fast.
New chips mentioned here: http://investors.micron.com/releasedeta ... eID=692563
Hopefully the newer chips have higher densities and faster speeds. And are cheap. But as with many better, faster, cheaper, you usually have to pick only two.